High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress
- 25 July 2019
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 40 (9) , 1443-1446
Abstract
We report a dual-gate, amorphous In-Ga-Sn-O (aIGTO) thin-film transistor (TFT) exhibiting high field-effect mobility (μFE) and very low subthreshold swing. The TFT has a bottom-gate having 5 μm overlap with source/drain (S/D) and a top-gate with 0.5 μm offset with S/D electrodes. The bottom-gate potential is swept at various top-gate voltages. The μFE of a-IGTO TFT is found to be 39.1 cm 2 V -1 s -1 which is almost independent of top-gate potential. The subthreshold swing is ~ 0.19 Vdec -1 and also does not change much with top-gate potential variation between -50 V and +90 V, indicating very low density of states in the gap. The a-IGTO TFT exhibits no effect of negative bias illumination stress.Keywords
Funding Information
- Ministry of Trade, Industry and Energy (10052044)
- Korea Display Research Corporation
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