InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
Authors:
- Takashi MukaiTMTakashi Mukai
- Kazunori TakekawaKTKazunori Takekawa
- Shuji NakamuraSNShuji Nakamura
- 1 July 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (7B) , L839
Abstract
InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed the similar blue shift with increasing forward currents for both LEDs. The output power of both LEDs was almost the same, as high as 6 mW at a current of 20 mA. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. These results indicate that the In composition fluctuation is not caused by dislocations, the dislocations do not act as nonradiative recombination centers in the InGaN, and the dislocations forms the leakage current pathway in InGaN.Keywords
This publication has 10 references indexed in Scilit:
- Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient TemperaturesJapanese Journal of Applied Physics, 1998
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaNJapanese Journal of Applied Physics, 1998
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN SubstratesJapanese Journal of Applied Physics, 1998
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995