Mechanisms of Plasma Induced Silicon Deposition and the Control of the Properties of the Deposit
Authors:
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 118
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Dominant reaction channels and the mechanism of silane decomposition in a H2-Si(s)-SiH4 glow dischargePlasma Chemistry and Plasma Processing, 1987
- High-rate deposition of amorphous hydrogenated silicon: effect of plasma excitation frequencyElectronics Letters, 1987
- Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition: I . KineticsJournal of the Electrochemical Society, 1986
- Plasma‐Enhanced Chemical Vapor Deposition of Silicon Epitaxial LayersJournal of the Electrochemical Society, 1984
- Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of DisilaneJapanese Journal of Applied Physics, 1984
- Plasma Deposition of a-Si:HMRS Proceedings, 1984
- Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees CJournal of Physics C: Solid State Physics, 1981
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Epitaxial growth of silicon from SiH4 in the temperature range 800–1150°CSolid-State Electronics, 1973
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968