I-V and C-V characteristics of Au/TiO2 Schottky diodes
Authors:
- 1 June 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (6) , 3310-3312
Abstract
The electrical characteristics of Au/n-TiO2 Schottky diodes have been studied using I-V and C-V measurements. TiO2 samples with working face perpendicular to the c axis are reduced in a vacuum of 10−6 Torr at 800 °C for about 5 h and then quenched. The resistivities are in the range 20–30 Ω cm. The barrier heights deduced from I-V characteristics in agreement with the thermionic emission theory are in the range 0.87–0.94 eV. C-V data yield lower barrier heights and show a frequency dependence attributed to relaxation phenomena occurring in a disturbed layer near the surface. Comparison with results relative to Au/n-SrTiO3 diodes shows that the barrier heights obey the Schottky model for these ionic semiconductors, confirming the role of the electron affinity in the band bending formation.Keywords
This publication has 11 references indexed in Scilit:
- Impédance des jonctions entre une électrode polycristalline d'alliage GaxIn1−xP et un électrolyte aqueuxSurface Science, 1979
- On the frequency and voltage dependence of the impedance of n- and p-type GaAs/metal schottky barriersSurface Science, 1978
- On the determination of the flat-band potential of a semiconductor in contact with a metal or an electrolyte from the Mott-Schottky plotJournal of Physics D: Applied Physics, 1978
- Reflectance and electroreflectance of TiO2single crystals. II. Assignment to electronic energy levelsJournal of Physics C: Solid State Physics, 1977
- On the frequency-dependence of the impedance of n- and p-type gallium arsenide electrodesSurface Science, 1976
- Electrochemical Properties of the Semiconducting TiO2(Rutile) Single Crystal ElectrodeBerichte der Bunsengesellschaft für physikalische Chemie, 1976
- Photoelectrolysis of water in cells with SrTiO3 anodesApplied Physics Letters, 1976
- Investigation on the frequency‐dependence of the impedance of the nearly ideally polarizable semiconductor electrodes CdSe, CdS and TiO2Berichte der Bunsengesellschaft für physikalische Chemie, 1975
- Surface barrier energies on strontium titanateJournal of Applied Physics, 1972
- Diffusion of Oxygen Vacancies in Reduced Rutile (TiO2)Journal of the Physical Society of Japan, 1972