A study on the etch characteristics of ITO thin film using inductively coupled plasmas
Authors:
- J.Y. ParkJPJ.Y. Park
- H.S. KimHKH.S. Kim
- D.H. LeeDLD.H. Lee
- K.H. KwonKKK.H. Kwon
- G.Y. YeomGYG.Y. Yeom
- 1 September 2000
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 131 (1-3) , 247-251
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Plasma Etching of ITO Thin Films Using a CH4/H2 Gas MixtureJapanese Journal of Applied Physics, 1990
- Characterization of Indium Tin Oxide and Reactive Ion Etched Indium Tin Oxide SurfacesJapanese Journal of Applied Physics, 1990