Increased drift carrier lifetime in semiconducting boron carbides deposited by plasma enhanced chemical vapor deposition from carboranes and benzene

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Abstract
Plasma-enhanced chemical vapor (PECVD) codeposition of benzene and 1,2-dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) and benzene, 1,7 dicarbadodecaborane, and 1,7-B10C2H12 (metacarborane) results in semiconducting boron carbide composite films with significantly longer drift carrier lifetimes than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane or metacarborane alone. Capacitance versus voltage C(V) and current versus voltage I(V) measurements indicate the hole carrier lifetimes for PECVD benzene/orthocarborane based semiconducting boron carbide composites increase to 2.5 ms from values of ≤35 μs for the PECVD semiconducting boron carbide films fabricated without benzene. For PECVD benzene/metacarborane based semiconducting boron carbide composites, there is an increase in the hole carrier lifetime to roughly 300 ns from values of 50 ns for those films fabricated without benzene.
Funding Information
  • Office of Research and Economic Development at the University of Nebraska-Lincoln
  • Division of Chemistry (CHE-1461027)
  • Defense Advanced Research Projects Agency (2381-003)
  • Defense Threat Reduction Agency (HDTRA1-14-4-0041)
  • National Aeronautics and Space Administration (13-EPSCoR-0012)
  • Microelectronics Advanced Research Corporation (SRC 2381-002)

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