Comparison of the Performance of InGaN∕AlGaN MQW LEDs Grown on c-Plane and a-Plane Sapphire Substrates
Authors:
- 1 January 2007
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 10 (1) , H5-H7
Abstract
We report a comparative study on the performance of multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c-plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate.Keywords
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