Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion
Authors:
- 29 May 2009
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 2 (6) , 061401
Abstract
In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current–voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 103–104, giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance.Keywords
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