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  3. 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs
  1. Home
  2. Publications
  3. 4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs

4H-SiC MOSFETs on C(000-,1) Face with Inversion Channel Mobility of 127cm2/Vs

Authors:
  • KFKenji Fukuda
    Kenji Fukuda
  • JSJunji Senzaki
    Junji Senzaki
  • KKKazutoshi Kojima
    Kazutoshi Kojima
  • TSTakaya Suzuki
    Takaya Suzuki
Publisher website
Google Scholar
  • 15 June 2004
    • journal article
    • Published by Trans Tech Publications, Ltd. in Materials Science Forum
    • Vol. 457-460, 1417-1420
    • DOI:10.4028/www.scientific.net/msf.457-460.1417
Abstract
No abstract available
Keywords
  • CARBON FACE
  • INTERFACE STATES (OR TRAPS)
  • INVERSION CHANNEL MOBILITY
  • METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
  • SILICON CARBIDE (SIC)
Cited by 22 articles
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