Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs
Authors:
- 23 September 2011
- journal article
- letter
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Device and Materials Reliability
- Vol. 11 (4) , 551-554
Abstract
The relative neutron-induced soft-error rate (SER) of bulk FinFET SRAMs compared to planar SRAMs is estimated based on drain area, collected charge, and critical charge using mixed-mode 3-D TCAD simulations. The critical charges of the bulk FinFET and planar devices are comparable, with identical gate length, gate width, and gate oxide thickness. However, the charges collected by the bulk FinFET drain due to ion strikes are smaller than those by the planar FET drain. Bulk FinFETs are anticipated to exhibit lower SER sensitivity compared to planar FETs.Keywords
This publication has 10 references indexed in Scilit:
- Comparing Single Event Upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations2010
- 3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent GatesIEEE Transactions on Nuclear Science, 2009
- Device optimization of bulk FinFETs and its comparison with SOI FinFETs2007
- A Multi-Gate MOSFET Compact Model Featuring Independent-Gate Operation2007
- Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers2004
- Detailed analysis of secondary ions' effect for the calculation of neutron-induced SER in SRAMsIEEE Transactions on Nuclear Science, 2001
- Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactionsIEEE Transactions on Nuclear Science, 2001
- Impact of CMOS technology scaling on the atmospheric neutron soft error rateIEEE Transactions on Nuclear Science, 2000
- Monte Carlo Simulation of Coupled Ion-Electron Transport in SemiconductorsPhysica Status Solidi (a), 1987
- A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devicesIEEE Electron Device Letters, 1981