Effect of Phosphorus-Doping on Electrochemical Performance of Silicon Negative Electrodes in Lithium-Ion Batteries
- 10 March 2016
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 8 (11) , 7125-7132
Abstract
The effect of phosphorus (P)-doping on the electrochemical performance of Si negative electrodes in lithium-ion batteries was investigated. Field-emission scanning electron microscopy was used to observe changes in surface morphology. Surface crystallinity and the phase transition of Si negative electrodes before and after a charge–discharge cycle were investigated by Raman spectroscopy and X-ray diffraction. Li insertion energy into Si was also calculated based on computational chemistry. The results showed that a low P concentration of 124 ppm has a meaningful influence on the electrochemical properties of a Si negative electrode; the cycle performance is improved by P-doping of Si. P-doping suppresses the changes in the surface morphology of a Si negative electrode and the phase transition during a charge–discharge cycle. Li insertion energy increases with an increase in the P concentration; Li insertion into P-doped Si is energetically unfavorable, which indicates that the crystal lattice of Si shrinks as a result of the replacement of some Si atoms with smaller P atoms, and therefore, it is more difficult to insert Li into P-doped Si. These results reveal that suppression of the phase transition reduces the large change in the volume of Si and prevents a Si negative electrode from disintegrating, which helps to improve the otherwise poor cycle performance of a Si electrode.Keywords
Funding Information
- Japan Society for the Promotion of Science (15K21166, 24350094)
This publication has 45 references indexed in Scilit:
- Effect of carrier gas on anode performance of Si thick-film electrodes prepared by gas-deposition methodThin Solid Films, 2012
- Dopant Modulated Li Insertion in Si for Battery Anodes: Theory and ExperimentThe Journal of Physical Chemistry C, 2011
- In Situ Transmission Electron Microscopy Observation of Nanostructural Changes in Phase-Change MemoryACS Nano, 2011
- Conductive-probe atomic force microscopy characterization of silicon nanowireDiscover Nano, 2011
- Doping Limits of Grown insitu Doped Silicon Nanowires Using PhosphineNano Letters, 2009
- Crystal and electronic structure of Li15Si4Journal of Applied Physics, 2007
- Reversible Cycling of Crystalline Silicon PowderJournal of the Electrochemical Society, 2007
- Doping effects on the Raman spectra of silicon nanowiresPhysical Review B, 2006
- In Situ XRD and Electrochemical Study of the Reaction of Lithium with Amorphous SiliconJournal of the Electrochemical Society, 2004
- From ultrasoft pseudopotentials to the projector augmented-wave methodPhysical Review B, 1999