The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer
- 20 March 2014
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 2 (16) , 2998-3004
Abstract
Low operational voltage flexible organic thin-film transistors (OTFTs) have been achieved using two layers of cross-linked PVP as the dielectric layer on a flexible polyimide (PI) substrate. At low operating voltages of −4 V, the flexible OTFTs showed good performances with high field-effect mobility (∼0.56 cm2 V−1 s−1), low threshold voltage (∼−0.82 V), high on/off current ratio (∼105) and excellent electrical stability (∼2 months). During a severe mechanical bending test (104 bending cycles and a bending radius of 0.75 mm) under ambient conditions, the flexible OTFTs still showed excellent electrical performance at the low operational voltage. Moreover, the effects of the mechanical bending on the electrical parameters of the flexible OTFTs were also systematically investigated. We found that the variations of the electrical parameters of the flexible OTFTs during the mechanical bending process were closely related to the distance effect of the spacing between stretched pentacene molecules and the doping effect of H2O and O2 which were induced by the mechanical bending strains. In comparison with previously reported flexible OTFTs, the research results showed that the distance effect and doping effect were mutually independent as well as mutually related during the mechanical bending process of the flexible OTFTs.Keywords
This publication has 28 references indexed in Scilit:
- Large scale, flexible organic transistor arrays and circuits based on polyimide materialsOrganic Electronics, 2013
- Flexible Non‐Volatile Ferroelectric Polymer Memory with Gate‐Controlled Multilevel OperationAdvanced Materials, 2012
- High‐Performance Top‐Gated Organic Field‐Effect Transistor Memory using Electrets for Monolithic Printed Flexible NAND Flash MemoryAdvanced Functional Materials, 2012
- Ultra-flexible solution-processed organic field-effect transistorsNature Communications, 2012
- Flexible organic transistors and circuits with extreme bending stabilityNature Materials, 2010
- Controllable Shifts in Threshold Voltage of Top‐Gate Polymer Field‐Effect Transistors for Applications in Organic Nano Floating Gate MemoryAdvanced Functional Materials, 2010
- Organic Nonvolatile Memory Transistors for Flexible Sensor ArraysScience, 2009
- Materials and Applications for Solution-Processed Organic Field-Effect TransistorsProceedings of the IEEE, 2009
- Highly Bendable, Transparent Thin‐Film Transistors That Use Carbon‐Nanotube‐Based Conductors and Semiconductors with Elastomeric DielectricsAdvanced Materials, 2006
- Flexible active-matrix displays and shift registers based on solution-processed organic transistorsNature Materials, 2004