CONTROL OF FACET DAMAGE IN GaAs LASER DIODES
Authors:
- 15 June 1971
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (12) , 571-573
Abstract
Antireflecting films of SiO, applied to one facet of a laser diode, substantially increase the threshold for catastrophic facet failure. Tripling of the allowable peak power from one end of single-heterojunction ``close-confinement'' lasers is reported. The increase appears to be too large for a simple model of damage by optical absorption at an imperfection near the surface.Keywords
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