Strain-Induced Self Organization of Metal−Insulator Domains in Single-Crystalline VO2 Nanobeams
Top Cited Papers
- 26 September 2006
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (10) , 2313-2317
Abstract
We investigated the effect of substrate-induced strain on the metal−insulator transition (MIT) in single-crystalline VO2 nanobeams. A simple nanobeam−substrate adhesion leads to uniaxial strain along the nanobeam length because of the nanobeam's unique morphology. The strain changes the relative stability of the metal (M) and insulator (I) phases and leads to spontaneous formation of periodic, alternating M−I domain patterns during the MIT. The spatial periodicity of the M−I domains can be modified by changing the nanobeam thickness and the Young's modulus of the substrate.Keywords
This publication has 22 references indexed in Scilit:
- Dynamical Singlets and Correlation-Assisted Peierls Transition inPhysical Review Letters, 2005
- Single-Crystalline Vanadium Dioxide Nanowires with Rectangular Cross SectionsJournal of the American Chemical Society, 2004
- Cation Exchange Reactions in Ionic NanocrystalsScience, 2004
- Size-Dependent Optical Properties ofNanoparticle ArraysPhysical Review Letters, 2004
- Quantum transport of non-interacting Fermi gas in an optical lattice combined with harmonic trappingNew Journal of Physics, 2004
- Onset of heterogeneous crystal nucleation in colloidal suspensionsNature, 2004
- Strain-Mediated Phase Coexistence in Heteroepitaxial FilmsPhysical Review Letters, 2000
- Stable Five- and Six-Coordinated Silicate Anions in Aqueous SolutionScience, 1999
- Metal-semiconductor domain configurations during switching of VO2single crystalsJournal of Physics C: Solid State Physics, 1976
- Moving boundaries and travelling domains during switching of VO2single crystalsJournal of Physics C: Solid State Physics, 1975