Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor
Authors:
- 15 July 2015
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 3 (37) , 9540-9550
Abstract
Nanoscale non-volatile CBRAM-cells are developed by using a CuO solid-electrolyte, providing a ∼102memory margin, ∼3 × 106endurance cycles, ∼6.63-years retention time at 85 °C, ∼100 ns writing speed, and MLC operation.Keywords
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