Ultrahigh-Frequency Piezoelectric Thin Film for Determination of Silicon Attenuation Coefficient

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Abstract
Ultrasonic attenuation affects the quality of ultrasonic imaging and material characterization significantly, especially at ultrahigh frequencies (>100 MHz), where higher attenuation bring about additional challenges. However, the reliable ultrasonic attenuation coefficients are scarce in this frequency range. In this study we propose a method of measuring ultrasound attenuation coefficient at ultrahigh frequencies. By the spectral analysis of multiple ultrasonic echoes ,the aggregate attenuation coefficient was extracted. Ultrasonic diffraction attenuation and transmission loss at the material interface are calibrated by using circular flat transducer acoustic fields and acoustic transmission line theory, respectively. The attenuation coefficient of silicon at approximately 150 MHz was measured to be 10.52 dB/cm. This article presents a novel approach for evaluating ultrasonic attenuation in the ultrahigh frequency range, reducing experimental errors and equipment costs. The proposed methodology also contributes to the development and characterization of ultrahigh frequency ultrasonic transducers.
Funding Information
  • National Natural Science Foundations of China (62474129, 62304165)
  • Fundamental Research Funds for the Central Universities (YJSJ25013)
  • Innovation Fund of Xidian University
  • Industry-University-Academy Cooperation Program of Xidian University-Chongqing IC Innovation Research Institute (CQIRI-2021CXY-Z03)
  • Xidian University Specially Funded Project for Interdisciplinary Exploration (TZJH2024010)
  • Natural Science Fundamental Research Project of Shaanxi Province of China (2023-JC-QN-0709)
  • Fundamental Research Funds for the Central Universities (XJSJ23048)
  • China Postdoctoral Science Foundation (2023M732745)
  • National funded postdoctoral program of China (GZC20232024)

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