Substrate bias effect on the random telegraph signal parameters in submicrometer silicon p–metal–oxide–semiconductor transistors
Authors:
- 15 January 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (2) , 910-914
Abstract
The effects of the substrate bias V BS on the parameters of random telegraph signals (RTSs) in submicrometer siliconp‐channel metal–oxide–semiconductor transistors are analyzed. The fractional RTS amplitude increases slightly for more positive V BS , suggesting a close connection with the capture cross section of the corresponding near‐interface oxide trap. A strong exponential dependence of the capture time constant on the drain current I D is observed, which can be explained by the transverse‐field dependence of the hole capture cross section. The emission time constant on the other shows only a weak dependence on V BS , or I D . Finally, the corresponding low‐frequency noise peaks at constant frequency f are studied in detail; excellent agreement is observed between the theoretical Lorentzian spectrum and the experimental peaks.Keywords
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