Field emission from tungsten-clad silicon pyramids
Authors:
- H.H. BustaHBH.H. Busta
- R.R. ShadduckRSR.R. Shadduck
- W.J. OrvisWOW.J. Orvis
- 1 November 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (11) , 2679-2685
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Comparison of low-voltage field emission from TaC and tungsten fiber arraysJournal of Materials Research, 1988
- Nature of the self-limiting effect in the low-pressure chemical vapor deposition of tungstenApplied Physics Letters, 1987
- The Effects of Chemical Oxide on the Deposition of Tungsten by the Silicon Reduction of Tungsten HexafluorideJournal of the Electrochemical Society, 1987
- The Formation and Structure of CVD W Films Produced by the Si Reduction of WF 6Journal of the Electrochemical Society, 1987
- Low-voltage field emission from tungsten fiber arrays in a stabilized zirconia matrixJournal of Materials Research, 1987
- Novel type of emissive flat panel display: the matrixed cold-cathode microtip fluorescent displayDisplays, 1987
- Film Thickness Dependence of Silicon Reduced LPCVD Tungsten on Native Oxide ThicknessJournal of the Electrochemical Society, 1986
- A vacuum field effect transistor using silicon field emitter arrays1986
- Vacuum integrated circuits1985
- The Slope of Logarithmic Plots of the Fowler-Nordheim EquationPhysical Review B, 1952