P-Channel GaN FETs on Low-Doped Layers Enabled by Thermal Mg-Diffusion Process: Demonstration and Characterization
Open Access
- 1 August 2026
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 73 (8) , 5167-5172
Abstract
No abstract availableThis publication has 46 references indexed in Scilit:
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