High Power Broad Area GaInAs/GaAs/GaInP Lasers Grown by CBE for Pumping Er Doped Glasses
Authors:
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 300
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- High quality 0.98 μm GaInAs/GaAs/GaInP lasers grown by CBE using tertiarybutylarsine and tertiarybutylphosphineElectronics Letters, 1993
- High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laserJournal of Applied Physics, 1992
- Low-threshold InGaAs strained-layer quantum well lasers (λ=0.98 μm) with GaInP cladding layers prepared by chemical beam epitaxyApplied Physics Letters, 1992
- Low threshold current InGaAs/GaAs/GaInP lasers grown by gas-source molecular beam epitaxyApplied Physics Letters, 1992
- High-power and high-efficiency diode-pumped Er:Yb:glass laserElectronics Letters, 1992
- Low-threshold InGaAs strained-layer quantum-well lasers (λ=0.98 μm) with GaInP cladding layers and mass-transported buried heterostructureApplied Physics Letters, 1992
- Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facetsApplied Physics Letters, 1991
- Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsineApplied Physics Letters, 1991
- Current Density Dependence for Dark-Line Defect Growth Velocity in Strained InGaAs / AlGaAs Quantum Well Laser DiodesJapanese Journal of Applied Physics, 1991
- Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1991