Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
Authors:
- M.A. MoramMMM.A. Moram
- M.J. KappersMKM.J. Kappers
- T.B. JoyceTJT.B. Joyce
- P.R. ChalkerPCP.R. Chalker
- Z.H. BarberZBZ.H. Barber
- C.J. HumphreysCHC.J. Humphreys
- 1 October 2007
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 308 (2) , 302-308
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on siliconJournal of Applied Physics, 2006
- Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) waferApplied Physics Letters, 2005
- Evolution of AlN buffer layers on silicon and effects on the properties of epitaxial GaN filmsphysica status solidi (c), 2003
- Domain epitaxy: A unified paradigm for thin film growthJournal of Applied Physics, 2003
- Lattice-matched HfN buffer layers for epitaxy of GaN on SiApplied Physics Letters, 2002
- Growth of high quality GaN layers with AlN buffer on Si(111) substratesJournal of Crystal Growth, 2001
- Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablationApplied Physics A, 1999
- Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter depositionJournal of Applied Physics, 1999
- Thermal stability of GaN on (1 1 1) Si substrateJournal of Crystal Growth, 1998
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994