Heteroepitaxial growth of highly anisotropic Sb 2 Se 3 films on GaAs
- 12 May 2025
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Materials Horizons
- Vol. 12 (15) , 5829-5838
Abstract
We prepare quasi-1D films of Sb 2 Se 3 on GaAs by molecular beam epitaxy. The aligned grains and anisotropic bonding hierarchy of the Sb 2 Se 3 unit cell together produce giant birefringence in the near-infrared.Keywords
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Funding Information
- Defense Advanced Research Projects Agency
- National Science Foundation (DMR-2036520)
- National Science Foundation (ECCS-2026822)
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