Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser
Authors:
- 6 April 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (14) , 874-876
Abstract
A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro-optical switching were demonstrated.Keywords
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