Nitride light-emitting diodes grown on Si (111) using a TiN template

Nitride light-emitting diodes (LEDs) are grown on a Si (111) substrate with a TiN template. Transmission electron microscopy and x-ray diffraction indicate that the epitaxial relation follows $\mathrm{Si}(1,1,1)\Vert \mathrm{Ti}\mathrm{N}(1,1,1)\Vert \mathrm{Al}\mathrm{N}(0,0,1)$ , $\mathrm{Si}[1,1,0]\Vert \mathrm{Ti}\mathrm{N}[1,1,0]$ , and $\mathrm{Si}[0,0,1]\Vert \mathrm{Ti}\mathrm{N}[0,0,1]$ . The reflectance measurement and simulation results indicate that the TiN can be adopted as a reflector to mitigate the substrate absorption problem, thus increasing the extraction efficiency of nitride LEDs grown on Si.