Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain

This publication has 11 references indexed in Scilit:

• Germanium-on-insulator substrates by wafer bonding
  Journal of Electronic Materials, 2004
• High-Speed Schottky-Barrier pMOSFET With$f_T = 280 hbox GHz$
  IEEE Electron Device Letters, 2004
• $hbox Al_2hbox O_3$–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
  IEEE Electron Device Letters, 2004
• Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
  IEEE Electron Device Letters, 2004
• Germanium-On-Insulator (GeOI) structure realized by the Smart Cut™ technology
  MRS Proceedings, 2004
• Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
  Applied Physics Letters, 2003
• Activation and diffusion studies of ion-implanted p and n dopants in germanium
  Applied Physics Letters, 2003
• Sub-40 nm PtSi Schottky source/drain metal–oxide–semiconductor field-effect transistors
  Applied Physics Letters, 1999
• Metal-Germanium Contacts and Germanide Formation
  MRS Proceedings, 1985
• Solid Solubilities of Impurity Elements in Germanium and Silicon*
  Bell System Technical Journal, 1960