New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation
Authors:
- T. SatoTST. Sato
- M. OrshanskyMOM. Orshansky
- D. SylvesterDSD. Sylvester
- C. HuCHC. Hu
Top Cited Papers
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 201-204
Abstract
A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L/sub eff/, T/sub ok/, V/sub t/, R/sub dsw/ and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 /spl mu/m and 0.13 /spl mu/m technology nodes with L/sub eff/ down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model.Keywords
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