Electron properties of fluorinated single-layer graphene transistors
Authors:
- F. WithersFWF. Withers
- M. DuboisMDM. Dubois
- A. K. SavchenkoASA. K. Savchenko
- 6 August 2010
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 82 (7)
Abstract
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has a very large and strongly temperature-dependent resistance in the electroneutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localized electron states.Keywords
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