Damage immune field effect transistors with vacuum gate dielectric
Authors:
- Jin-Woo HanJHJin-Woo Han
- Jae-Hyuk AhnJAJae-Hyuk Ahn
- Yang-Kyu ChoiYCYang-Kyu Choi
- 1 January 2011
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 29 (1) , 011014
Abstract
A damage immune field effect transistor with a vacuum gate dielectric is presented. The device consists of a suspended silicon nanowire and an independently controlled double-gate. The vacuum gate dielectric with a thickness of 20 nm is formed by a sacrificial layer deposition and removal process. The vacuum gate dielectric is found to be resistant to radiation-induced damage. Furthermore, it shows a very high tolerance against hot-carrier stress. The excellent stability in the radiative environment and high electric field is attributed to the absence of material in the vacuum gate dielectric.Keywords
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