Effect of an $\mathrm{In}\mathrm{P}∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ interface on spin-orbit interaction in ${\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As}∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ heterostructures

We report the effect of the insertion of an $\mathrm{In}\mathrm{P}∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{47}\mathrm{As}$ Interface on the Rashba spin-orbit interaction in ${\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As}∕{\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{47}\mathrm{As}$ well, the overall values of the spin-orbit coupling constant $\alpha$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $\mathbf{k}\bullet \mathbf{p}$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.