A field-effect electron mobility model for SiC MOSFETs including high density of traps at the interface

This publication has 20 references indexed in Scilit:

• Channel-carrier mobility parameters for 4H SiC MOSFETs
  Microelectronics Reliability, 2003
• Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors
  Journal of Applied Physics, 2002
• Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor
  Journal of Applied Physics, 2002
• Effect of interface states on electron transport in 4H-SiC inversion layers
  IEEE Transactions on Electron Devices, 2001
• Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]
  IEEE Transactions on Electron Devices, 2001
• Charge-sheet model for silicon carbide inversion layers
  IEEE Transactions on Electron Devices, 1999
• SiC devices: physics and numerical simulation
  IEEE Transactions on Electron Devices, 1994
• Effective and field-effect mobilities in Si MOSFETs
  Solid-State Electronics, 1989
• A physically based mobility model for numerical simulation of nonplanar devices
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
• Carrier mobilities in silicon empirically related to doping and field
  Proceedings of the IEEE, 1967