Mechanisms for plasma and reactive ion etch-front roughening
Authors:
- 15 January 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (4) , 3012-3021
Abstract
Through extensive -dimensional numerical integration and Monte Carlo simulations, we compute the scaling exponents of a flux redistribution model that is proposed to describe plasma etching and reactive ion etching of surfaces. It is found that, while the surface morphology depends on the etching conditions, the roughness exponent α, the growth exponent β, and the dynamic exponent z are universal with regard to the details of the re-emission mechanism and are given by These exponents are in agreement with recent experiments on plasma etch-front roughening.
Keywords
This publication has 24 references indexed in Scilit:
- Roughening in Plasma Etch Fronts of Si(100)Physical Review Letters, 1999
- Microtrenching resulting from specular reflection during chlorine etching of siliconJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998
- Study of plasma - surface interactions: chemical dry etching and high-density plasma etchingPlasma Sources Science and Technology, 1996
- Study of silicon etching in CF4/O2 plasmas to establish surface re-emission as the dominant transport mechanismJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
- Silicon roughness induced by plasma etchingJournal of Applied Physics, 1994
- Shadowing instability in three dimensionsPhysical Review E, 1993
- Simulation of profile evolution in silicon reactive ion etching with re-emission and surface diffusionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992
- Interface growth with a shadow instabilityPhysical Review Letters, 1991
- Growth dynamics of sputter depositionPhysical Review Letters, 1989
- Thin-Film Growth and the Shadow InstabilityPhysical Review Letters, 1989