Novel Mold Fabrication for Nano-Imprint Lithography to Fabricate Single-Electron Tunneling Devices
Authors:
- Yoshihiko HiraiYHYoshihiko Hirai
- Yasuhito KanemakiYKYasuhito Kanemaki
- Kazuo MurataKMKazuo Murata
- Yoshio TanakaYTYoshio Tanaka
- 1 December 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (12S) , 7272-7275
Abstract
A novel method of fabricating a nano-imprinting mold for a single-electron device is newly proposed, which makes use of the peculiarity of anisotropic wet chemical etching. A row of resist patterns for quantum dots is placed to keep an offset angle θ against a crystalline axis on a (100) Si surface. By an anisotropic wet chemical etching, the Si substrate is diagonally etched along the and directions, and an inverted pyramidal hole with a (111) plane surface is formed. The gap between them becomes narrower than that of the original pattern. Using this method, the nano-imprinting mold for a quantum dot array with narrow gaps beyond the resolution limit of conventional lithography is obtained.Keywords
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