Fabrication of p-SnO/n-SnO2 transparent p-n junction diode by spray pyrolysis and extraction of device’s intrinsic parameters
Authors:
- Ebitha EqbalEEEbitha Eqbal
- Rakhy RaphaelRRRakhy Raphael
- K.J. SajiKSK.J. Saji
- E.I. AnilaEAE.I. Anila
- 1 July 2019
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 247, 211-214
Abstract
No abstract availableKeywords
Funding Information
- Board of Research in Nuclear Sciences
- Department of Atomic Energy
- Cochin University of Science and Technology
This publication has 6 references indexed in Scilit:
- Properties of transparent conducting tin monoxide(SnO) thin films prepared by chemical spray pyrolysis methodPhysica B: Condensed Matter, 2018
- Forming ohmic Ag/SnO2 contactsMaterials Letters, 2015
- Fabrication of p-n junction diode using SnO/SnO2 thin films and its device characteristicsElectronic Materials Letters, 2014
- Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin FilmsECS Solid State Letters, 2014
- Parasitic series resistance-independent method for device-model parameter extractionIEE Proceedings - Circuits, Devices and Systems, 1996
- Calculating double-exponential diode model parametersfrom previously extracted single-exponential modelparametersElectronics Letters, 1995