Improved performances in organic and polymer light‐emitting diodes using solution‐processed vanadium pentoxide as a hole injection layer
- 13 December 2012
- journal article
- research article
- Published by Wiley in Journal of the Society for Information Display
- Vol. 20 (12) , 640-645
Abstract
We report that a solution‐processed vanadium pentoxide (V2O5) layer can be utilized as an effective and stable hole injection layer in organic light‐emitting diodes and polymer light‐emitting diodes instead of polyethylene dioxythiophene : polystyrenesulfonate (PEDOT : PSS). The organic light‐emitting diode and polymer light‐emitting diode with the V2O5 layer have driving voltages that are 2.2 and 0.3 V lower for 1000 cd/m2, respectively, than the devices with PEDOT : PSS. In addition, the devices with the V2O5 layer show improved operational stability compared with the devices with PEDOT : PSS. Therefore, a solution‐processed V2O5 layer can be utilized as an effective and stable hole injection layer instead of PEDOT : PSS.Keywords
This publication has 19 references indexed in Scilit:
- Inverted Organic Solar Cells with Sol–Gel Processed High Work‐Function Vanadium Oxide Hole‐Extraction LayersAdvanced Functional Materials, 2011
- Solution Processed Vanadium Pentoxide as Charge Extraction Layer for Organic Solar CellsAdvanced Energy Materials, 2011
- MoO3 Films Spin‐Coated from a Nanoparticle Suspension for Efficient Hole‐Injection in Organic ElectronicsAdvanced Materials, 2010
- Solution deposited NiO thin-films as hole transport layers in organic photovoltaicsOrganic Electronics, 2010
- Transparent Inverted Organic Light‐Emitting Diodes with a Tungsten Oxide Buffer LayerAdvanced Materials, 2008
- Improved performances of organic light-emitting diodes with metal oxide as anode bufferJournal of Applied Physics, 2007
- Improved stability of OLEDs with mild oxygen plasma treated PEDOT:PSSJournal of Luminescence, 2007
- Vanadium pentoxide modified polycrystalline silicon anode for active-matrix organic light-emitting diodesApplied Physics Letters, 2005
- Stability of the interface between indium-tin-oxide and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) in polymer light-emitting diodesApplied Physics Letters, 2000
- Built-in field electroabsorption spectroscopy of polymer light-emitting diodes incorporating a doped poly(3,4-ethylene dioxythiophene) hole injection layerApplied Physics Letters, 1999