III-V Selective Area Growth by Molecular Beam Epitaxy for Integrated Quantum Systems and Applications

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Abstract
To realize practical quantum information processing systems with high fidelity, disparate materials and components must be integrated on a scalable, unified platform. Among these, III-V alloys with their widely tunable optical properties and advantageous transport properties are strong candidates for the generation, manipulation, and detection of qubit states. Here, we present selective area growth (SAG) of III-V semiconductors by molecular beam epitaxy (MBE) as a uniquely well-advantaged approach to overcome the limitations of heterogeneous and hybrid integration. We review the underlying mechanisms of SAG by MBE and notable recent advancements enabled by this technique. Then, we discuss III-V components that are of utmost importance for various quantum architectures including nanowires for hosting Majorana modes, quantum dots for both classical lasers and single-photon generation, nonlinear nanophotonics for the manipulation of light, and avalanche photodiodes for single photon counting. For each device architecture, we review recent advances in the performance of these components for quantum applications and identify key opportunities for SAG to be applied to realize scalable integrated systems.
Funding Information
  • Air Force Research Laboratory (FA8650-21-2-1000)
  • Air Force Research Laboratory (FA8750-22-2-0501)
  • National Aeronautics and Space Administration (80NSSC22K0287)
  • University of Illinois at Urbana-Champaign

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