Abstract
This brief presents an output transition detector-based radiation-hardened latch (TDRHL) for reliability improvement. With an error recovery assistant logic and an in-situ transition detector, for any radiation induced single-and double-node upsets, the proposed TDRHL can 1) provide full self-recovery capability, and 2) generate a warning signal for architecture-level recovery when soft errors cause the latch output flipped. The evaluation results show that TDRHL outperforms state-of-the-art DNU tolerant designs with addition error detection capability, and up to 5.0X PDP improvement can be achieved.
Funding Information
  • Waseda University and Toshiba Memory Corporation

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