Multivacancies, interstitials, and self-interstitial migration in silicon
Authors:
- 1 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 18-27
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- The electronic structure of deep SP-bonded acceptor impurities in semiconductorsSolid State Communications, 1981
- Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in siliconPhysical Review B, 1980
- New self-consistent approach to the electronic structure of localized defects in solidsPhysical Review B, 1979
- Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in SiliconPhysical Review Letters, 1978
- Self-Consistent Green's-Function Calculation of the Ideal Si VacancyPhysical Review Letters, 1978
- Electronic impurity levels in semiconductorsReports on Progress in Physics, 1974
- Localized Defects in Semiconductors: The Divacancy in SiliconPhysical Review B, 1967
- Localized Defects in SemiconductorsPhysical Review B, 1967
- Theory of Scattering in SolidsJournal of Mathematical Physics, 1964
- Wave Functions for Impurity LevelsPhysical Review B, 1954