Abstract
We report negative magnetoresistance in pulsed laser deposited single phase ZnO and Mg0.268Zn0.732O films and attribute it to the presence of oxygen interstitials (Oi) and zinc interstitials (Zni) as observed in the X-ray photoelectron spectra of the films. An interesting feature of reduction of negative magnetoresistance at low temperatures and large fields in Mg0.268Zn0.732O film is observed and is explained by taking into account the localized scattering.

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