Structural and optical characterization of Si quantumdots in a SiC matrix
- 1 January 2010
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 1260
Abstract
Amorphous hydrogenated Si1-xCx/SiC multilayers consisting of alternating Si1-xCx and stoichiometric SiC layers were prepared using Plasma Enhanced Chemical Vapour Deposition (PECVD). Annealing at temperatures up to 1100°C was done targeting the size controlled crystallization of Si nanocrystals (NCs) in a SiC matrix. The influence of annealing temperature on the nanostructure of the multilayers was studied using Glancing Incidence X-ray Diffraction (GIXRD), Raman spectroscopy and Transmission Electron Microscopy (TEM). GIXRD reveal the crystallization of Si and SiC, when annealing temperatures exceed 900°C. The crystallization of Si and SiC was confirmed by TEM bright-field imaging and electron diffraction. Annealing at 900°C, leads to the formation of Si NCs with a size of 3 nm, whereas the SiC NCs also have a size of 3 nm. However, a large amount of Si is still amorphous as shown by Raman spectroscopy. Annealing at temperatures exceeding 900°C reduces the amorphous phase and a further growth of Si NCs occurs.Keywords
This publication has 11 references indexed in Scilit:
- Structural characterization of annealed Si1−xCx/SiC multilayers targeting formation of Si nanocrystals in a SiC matrixJournal of Applied Physics, 2008
- Structural, electrical and photovoltaic characterization of Si nanocrystals embedded SiC matrix and Si nanocrystals/c-Si heterojunction devicesSolar Energy Materials and Solar Cells, 2008
- Modified Raman confinement model for Si nanocrystalsPhysical Review B, 2006
- Crystallization kinetics of amorphous SiC films: Influence of substrateApplied Surface Science, 2005
- Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approachApplied Physics Letters, 2002
- Crystallization of amorphous superlattices in the limit of ultrathin films with oxide interfacesPhysical Review B, 2000
- Structure and grain boundary defects of recrystallized silicon films prepared from amorphus silicon deposited using disilaneJournal of Applied Physics, 1995
- Effect of substrate bias on the properties of microcrystalline silicon films deposited in a glow dischargeSolid State Communications, 1982
- Raman scattering from hydrogenated microcrystalline and amorphous siliconJournal of Physics C: Solid State Physics, 1982
- X-Ray DiffractionPhysics Today, 1970