On the Specific on-State Resistance of Superjunction MOSFETs With a Compensated Pillar
Open Access
- 23 October 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 39 (12) , 1904-1907
Abstract
In this paper, we report an analytical model for the on-state characteristics of a superjunction MOSFET featuring a compensated pillar between the n-pillar and the p-pillar is established. Since a large amount of lateral electric field is sustained in the compensated region, the doping concentration in the n-pillar can be enhanced significantly, leading to a substantial reduction in the on-state resistance of the superjunction. Simulation results proved that the use of an extra compensated pillar within the superjunction structure reduces the on-state resistance by 25% compared to that of a conventional superjunction for the same breakdown voltage.Keywords
Funding Information
- On Semiconductor Corporation
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