High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

Authors:
  • SNShin-Ichi Nagahama
    Shin-Ichi Nagahama
  • NINaruhito Iwasa
    Naruhito Iwasa
  • MSMasayuki Senoh
    Masayuki Senoh
  • TMToshio Matsushita
    Toshio Matsushita
  • YSYasunobu Sugimoto
    Yasunobu Sugimoto
  • HKHiroyuki Kiyoku
    Hiroyuki Kiyoku
  • TKTokuya Kozaki
    Tokuya Kozaki
  • MSMasahiko Sano
    Masahiko Sano
  • HMHiroaki Matsumura
    Hiroaki Matsumura
  • HUHitoshi Umemoto
    Hitoshi Umemoto
  • KCKazuyuki Chocho
    Kazuyuki Chocho
  • TMTakashi Mukai
    Takashi Mukai
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Abstract
Epitaxially laterally overgrown GaN on free-standing GaN was used to reduce the threading dislocations which were widely scattered over the entire surface. The threading dislocation density of the GaN layer above the window area surrounding the SiO2 mask was reduced to 5×107/cm2, and that of the GaN layer above the SiO2 mask area was reduced to 7×105/cm2. InGaN multi-quantum-well laser diodes (LDs) grown on low-dislocation-density GaN substrates were demonstrated. LDs with an output power of 30 mW exhibited an estimated lifetime of 15,000 h at a case temperature of 60°C. At a case temperature of 25°C, the current at the output power of 30 mW and at the lasing threshold current were 42 mA and 23 mA, respectively. For comparison, LDs were grown on different substrates, and the dependence of their characteristics on the substrates was examined.

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