Lateral homojunctions of WSe 2 through contact surface engineering with SF 6 plasma etching
- 21 June 2024
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 12 (30) , 11474-11483
Abstract
SF 6 plasma etching was developed as a contact surface pre-treatment to achieve efficient n-doping in multilayer WSe 2 nanosheets and build lateral homojunctions exhibiting superb photovoltaic properties and self-powered wide-spectrum photodetection.Keywords
Funding Information
- Natural Science Foundation of Hebei Province (F2023201012)
- Hebei University (521000981204)
This publication has 41 references indexed in Scilit:
- High-Performance WSe2 Top-Gate Devices with Strong Spacer DopingNano Letters, 2023
- Lateral WSe2 Homojunction through Metal Contact Doping: Excellent Self‐powered Photovoltaic PhotodetectorAdvanced Functional Materials, 2023
- Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETsAdvanced Electronic Materials, 2023
- Selective Electron Beam Patterning of Oxygen‐Doped WSe2 for Seamless Lateral Junction TransistorsAdvanced Science, 2022
- Defect‐Engineered n‐Doping of WSe2 via Argon Plasma Treatment and Its Application in Field‐Effect TransistorsAdvanced Materials Interfaces, 2021
- Gate‐Controlled Polarity‐Reversible Photodiodes with Ambipolar 2D SemiconductorsAdvanced Functional Materials, 2020
- Modification of the Electronic Transport in Atomically Thin WSe2 by OxidationAdvanced Materials Interfaces, 2020
- Low‐Damaged Layer‐by‐Layer Etching of Large‐Area Molybdenum Disulfide Films via Mild Plasma TreatmentAdvanced Materials Interfaces, 2020
- Lateral Monolayer MoSe 2 –WSe 2 p–n Heterojunctions with Giant Built‐In PotentialsSmall, 2020
- Lateral 2D WSe2 p–n Homojunction Formed by Efficient Charge‐Carrier‐Type Modulation for High‐Performance OptoelectronicsAdvanced Materials, 2020