An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD

This publication has 41 references indexed in Scilit:

• On the Prediction of Crystal Morphology. I. The Hartman–Perdok Theory Revisited
  Acta Crystallographica Section A Foundations of Crystallography, 1998
• GaN and AlxGa1−xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
  Applied Physics Letters, 1997
• Observation of coreless dislocations in α-GaN
  Journal of Crystal Growth, 1997
• The key role of polarity in the growth process of (0001) nitrides
  Materials Science and Engineering: B, 1997
• Critical island size for layer-by-layer growth
  Physical Review Letters, 1994
• Stable and unstable growth in molecular beam epitaxy
  Physical Review Letters, 1994
• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
  Journal of Crystal Growth, 1989
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
  Applied Physics Letters, 1986
• The attachment energy as a habit controlling factor
  Journal of Crystal Growth, 1980
• On the relations between structure and morphology of crystals. I
  Acta Crystallographica, 1955