Formation of zero-dimensional hole states during molecular-beam epitaxy of Ge on Si (100)
- 1 July 1998
- journal article
- Published by Pleiades Publishing Ltd in JETP Letters
- Vol. 68 (2) , 135-141
Abstract
The characteristic features of electronic spectra in Ge/Si (100) heterostructures obtained by molecular-beam epitaxy are investigated by capacitance spectroscopy. It is observed that the...Keywords
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