Kinetics of thermal desorption using Auger electron spectroscopy application to cesium covered (110) gallium arsenide
Authors:
- 1 January 1976
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 11 (3) , 377-385
Abstract
We propose a new method for monitoring surface reactions kinetics using Auger Spectroscopy. It allows continuous observations of adsorption and desorption kinetics of an element A on the surface of a substrate B. The apparatus designed for this purpose transforms a standard Auger electron spectrometer into a detector measuring the rate of these surface reactions. We have used this technique to study the thermal desorption of cesium from (110) gallium arsenide. Several binding states are foundKeywords
This publication has 14 references indexed in Scilit:
- Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experimentsApplied Physics Letters, 1975
- AES and LEED study of the activation of GaAsCsO negative electron affinity surfacesSurface Science, 1975
- LEED, AES and work function measurements on clean and cesium covered polar faces of GaPSurface Science, 1975
- LEED, Auger Electron Spectroscopy (AES) and photoemission studies of the cesium covered GaAs (110) surfaceSurface Science, 1974
- Adsorption Kinetics of Cs on GaAsJournal of Applied Physics, 1972
- Auger electron spectroscopySurface Science, 1971
- Electron-Stimulated Desorption and Work Function Studies of Clean and Cesiated (110) GaAsJournal of Vacuum Science and Technology, 1971
- A Multichannel Monitor for Repetitive Auger Electron Spectroscopy with Application to Surface Composition ChangesReview of Scientific Instruments, 1970
- Determination of Surface Structures using LEED and Energy Analysis of Scattered ElectronsJournal of Applied Physics, 1969
- Photoelectric Emission and Interband Transitions of GaPPhysical Review B, 1966