Polarization‐Sensitive Artificial Optoelectronic Synapse Based on Anisotropic β‐Ga2O3 Single Crystal for Neuromorphic Vision Systems and Information Encryption

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Abstract
A novel polarization‐sensitive artificial optoelectronic synapse based on β‐Ga2O3 single‐crystal is proposed in this work, featuring reconfigurable anisotropic vision. A series of polarization‐sensitive synaptic activities and polarization‐sensitive image recognition functions are successfully simulated using this device. The intriguing performance of this device, stems from the crystal anisotropy in β‐Ga2O3, which is confirmed through polarization Raman measurements and first‐principles theoretical calculations. Furthermore, a comprehensive analysis of the persistent photoelectric properties of the device unveils that the adaptability of the optoelectronic synapse device stems from the ionization and dissociation of oxygen vacancies. Ultimately, the device is utilized in the fields of image recognition and information encryption. A four‐layer artificial neural network with two hidden layers is constructed for recognizing handwritten digits. After training, the recognition accuracy reaches over 91.5% for both unpolarized and polarized light. Information encryption is achieved by controlling polarization states. The device enables data generation and encryption to be conducted on the same platform, mitigating exposure risks during transmission and significantly enhancing data security and confidentiality. This work presents new opportunities for future applications of polarization‐based perception systems.
Funding Information
  • National Natural Science Foundation of China (No. U23A20349, No. 62304205)

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