Ion beam crystallography of silicon surfaces
Authors:
- R.M. TrompRTR.M. Tromp
- R.G. SmeenkRSR.G. Smeenk
- F.W. SarisFSF.W. Saris
- 1 March 1981
- journal article
- Published by Elsevier in Surface Science
- Vol. 104 (1) , 13-25
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Si(001) surface studies using high energy ion scatteringNuclear Instruments and Methods, 1980
- Reconstruction-induced mean-square displacements on the (001)-(2×1) surface of diamond-structure crystalsJournal of Physics C: Solid State Physics, 1979
- Physics of reconstructed silicon surfacesSurface Science, 1979
- Ion-beam crystallography of clean and sulfur covered Ni(110)Surface Science, 1979
- Relaxation effects and thermal vibrations in a Pt(111) surface measured by medium energy ion scatteringSurface Science, 1979
- The effect of oxygen coverage on surface relaxation of Ni(110) measured by medium energy ion scatteringSurface Science, 1979
- A LEED study of the Si{100}(1 × 1)H surface structureSurface Science, 1978
- The surface structure of Si(100) surfaces using averaged leed: I. The(1 × 1)H structureSurface Science, 1977
- Interplay of the monohydride phase and a newly discovered dihydride phase in chemisorption of H on Si(100)2 × 1Physical Review B, 1976
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959