Use of polyimide bonding for hybrid integrationof a vertical cavity surface emitting laser on a silicon substrate

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Abstract
The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1 mA and the maximum output power was 2.45 mW for a 15 µm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.