Temperature Dependent Emission of Strontium-Barium Orthosilicate (Sr2−xBax)SiO4:Eu2+ Phosphors for High-Power White Light-Emitting Diodes
Authors:
- 11 August 2011
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 158 (10) , P118-P121
Abstract
Samples of (Sr1.9−xBax)SiO4:Eu0.1 were synthesized by a solid-state reaction. The maximum emission intensity under 460 nm excitation was obtained at a Ba content, x, of 1.6. All Sr1.9−xBaxSiO4:Eu0.1 samples except for Ba1.9SiO4:Eu0.1 exhibited a temperature-driven blue-shift of the emission band. The thermostability of emission in (Sr1.9−xBax)SiO4:Eu0.1 depended strongly on the Ba/Sr ratio. The thermal quenching temperature reached its maximum at a Ba concentration x of 1.2–1.6 and was much lower for Ba1.9SiO4:Eu2+ 0.1.Keywords
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