Highly linear transconductance topology using floating transistors
Authors:
- 5 January 2006
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 42 (1) , 2-4
Abstract
A new technique for realising highly linear transconductances is presented. The technique is based on using floating transistors in the input stage of the transconductor, which act as source-followers along with a degeneration resistor. An example realisation of the technique is given together with circuit-level simulations.Keywords
This publication has 2 references indexed in Scilit:
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- Independent control of transconductance gain andinput linear range in a MOS linear transconductance amplifierElectronics Letters, 1996